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How to Use the 13003 Transistor in Power Circuits
You can use the 13003 transistor with voltages up to 400V between collector and emitter. Always check the datasheet for your specific part before building your circuit.
MJE13003
These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as
EB13003 PDF Datasheet – 400V, 1A, NPN Transistor, TO-126
The EB13003 is an NPN high-voltage power transistor designed for switching applications, typically rated around V CEO =400V and I C =1A in a TO-126-style package. It features
13003 PDF Datasheet
13003 is 400V, 1500mA, NPN Epitaxial Silicon Transistor. This indicates the maximum collector-emitter voltage the transistor can handle without breakdown. In this case, it is 400 volts.
High voltage fast-switching NPN power transistor
Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge
13003 Transistor: Datasheet, Pinout, Circuit Diagram and Equivalent
The 13003 transistor handles high voltage up to 400V and current up to 4A, making it ideal for power switching and control circuits. Its fast switching speed and low saturation voltage
13003/MJE13003 Transistor: Pinout, Features, Equivalent and
In this circuit, the 13003 transistor is used as a key component in an inverter circuit that converts DC power to AC power. The DC input is connected to the transistor, which acts as a switch
13003 / MJE13003 Transistor Pinout, Equivalent, Uses, Specs & Other
The device is capable of handling collector-emitter voltage of 400V DC and collector-emitter voltage of 700V DC which makes it ideal to use in wide variety of AC and DC high voltage
MJE13003 Datasheet (PDF)
They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Wing Shing
13003 Datasheet PDF and Replacements, Transistor Equivalent
Built on high-voltage silicon, it typically supports a collector-emitter voltage of 400V and current ratings around 1.25A. The device operates efficiently in high-frequency flyback topologies, providing fast
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